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JAN2N2222AUB

JAN2N2222AUB

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Microsemi

Part Number:: JAN2N2222AUB

Manufacturer/Brand:: Microsemi

Product Description:: TRANS NPN 50V 0.8A

Datasheets:: JAN2N2222AUB.pdf

RoHs Status:: Contains lead / RoHS non-compliant

Stock Condition:: 9283 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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In Stock 9283 pcs Reference Price(In US Dollars)

105 pcs
$3.688

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Specifications of JAN2N2222AUB

Microsemi

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Part Number	JAN2N2222AUB	Manufacturer	Microsemi
Description	TRANS NPN 50V 0.8A	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Quantity Available	9283 pcs stock	Data sheet	JAN2N2222AUB.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	1V @ 50mA, 500mA
Transistor Type	NPN	Series	Military, MIL-PRF-19500/255
Power - Max	500mW	Packaging	Bulk
Package / Case	3-SMD, Non-Standard	Other Names	1086-2326 1086-2326-MIL
Operating Temperature	-65°C ~ 200°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Manufacturer Standard Lead Time	8 Weeks
Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant	Frequency - Transition	-
Detailed Description	Bipolar (BJT) Transistor NPN 50V 800mA 500mW Surface Mount	DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V
Current - Collector Cutoff (Max)	50nA	Current - Collector (Ic) (Max)	800mA

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Part Number	JAN2N2222AUB	Manufacturer	Microsemi
Description	TRANS NPN 50V 0.8A	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Quantity Available	9283 pcs stock	Data sheet	JAN2N2222AUB.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	1V @ 50mA, 500mA
Transistor Type	NPN	Series	Military, MIL-PRF-19500/255
Power - Max	500mW	Packaging	Bulk
Package / Case	3-SMD, Non-Standard	Other Names	1086-2326 1086-2326-MIL
Operating Temperature	-65°C ~ 200°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Manufacturer Standard Lead Time	8 Weeks
Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant	Frequency - Transition	-
Detailed Description	Bipolar (BJT) Transistor NPN 50V 800mA 500mW Surface Mount	DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V
Current - Collector Cutoff (Max)	50nA	Current - Collector (Ic) (Max)	800mA