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NJVMJD112G

NJVMJD112G

NJVMJD112G
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See specifications for product details.
AMI Semiconductor / ON SemiconductorAMI Semiconductor / ON Semiconductor
Part Number:
NJVMJD112G
Manufacturer/Brand:
AMI Semiconductor / ON Semiconductor
Product Description:
TRANS NPN DARL 100V 2A DPAK-4
Datasheets:
NJVMJD112G.pdf
RoHs Status:
Lead free / RoHS Compliant
Stock Condition:
157237 pcs stock
Ship From:
Shipment Way:
DHL/Fedex/TNT/UPS/EMS

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In Stock 157237 pcs Reference Price(In US Dollars)

  • 825 pcs
    $0.143
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NJVMJD112G

Specifications of NJVMJD112G

AMI Semiconductor / ON SemiconductorAMI Semiconductor / ON Semiconductor
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Part Number NJVMJD112G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN DARL 100V 2A DPAK-4 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 157237 pcs stock Data sheet NJVMJD112G.pdf
Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 4A
Transistor Type NPN - Darlington Supplier Device Package DPAK
Series - Power - Max 1.75W
Packaging Tube Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 5 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 25MHz
Detailed Description Bipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 1.75W Surface Mount DPAK DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 2A, 3V
Current - Collector Cutoff (Max) 20µA Current - Collector (Ic) (Max) 2A
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