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BD439G

BD439G

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AMI Semiconductor / ON Semiconductor

Part Number:: BD439G

Manufacturer/Brand:: AMI Semiconductor / ON Semiconductor

Product Description:: TRANS NPN 60V 4A TO-225AA

Datasheets:: BD439G.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 212507 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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In Stock 212507 pcs Reference Price(In US Dollars)

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Specifications of BD439G

AMI Semiconductor / ON Semiconductor

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Part Number	BD439G	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN 60V 4A TO-225AA	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	212507 pcs stock	Data sheet	BD439G.pdf
Voltage - Collector Emitter Breakdown (Max)	60V	Vce Saturation (Max) @ Ib, Ic	800mV @ 300mA, 3A
Transistor Type	NPN	Supplier Device Package	TO-225AA
Series	-	Power - Max	36W
Packaging	Bulk	Package / Case	TO-225AA, TO-126-3
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Manufacturer Standard Lead Time	2 Weeks
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	3MHz
Detailed Description	Bipolar (BJT) Transistor NPN 60V 4A 3MHz 36W Through Hole TO-225AA	DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 500mA, 1V
Current - Collector Cutoff (Max)	100µA (ICBO)	Current - Collector (Ic) (Max)	4A
Base Part Number	BD439

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Part Number	BD439G	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN 60V 4A TO-225AA	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	212507 pcs stock	Data sheet	BD439G.pdf
Voltage - Collector Emitter Breakdown (Max)	60V	Vce Saturation (Max) @ Ib, Ic	800mV @ 300mA, 3A
Transistor Type	NPN	Supplier Device Package	TO-225AA
Series	-	Power - Max	36W
Packaging	Bulk	Package / Case	TO-225AA, TO-126-3
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Manufacturer Standard Lead Time	2 Weeks
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	3MHz
Detailed Description	Bipolar (BJT) Transistor NPN 60V 4A 3MHz 36W Through Hole TO-225AA	DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 500mA, 1V
Current - Collector Cutoff (Max)	100µA (ICBO)	Current - Collector (Ic) (Max)	4A
Base Part Number	BD439