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2SA1930,LBS2DIAQ(J

2SA1930,LBS2DIAQ(J

2SA1930,LBS2DIAQ(J
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See specifications for product details.
Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
Part Number:
2SA1930,LBS2DIAQ(J
Manufacturer/Brand:
Toshiba Semiconductor and Storage
Product Description:
TRANS PNP 2A 180V TO220-3
Datasheets:
2SA1930,LBS2DIAQ(J.pdf
RoHs Status:
Lead free / RoHS Compliant
Stock Condition:
4688 pcs stock
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Shipment Way:
DHL/Fedex/TNT/UPS/EMS

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2SA1930,LBS2DIAQ(J

Specifications of 2SA1930,LBS2DIAQ(J

Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
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Part Number 2SA1930,LBS2DIAQ(J Manufacturer Toshiba Semiconductor and Storage
Description TRANS PNP 2A 180V TO220-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 4688 pcs stock Data sheet 2SA1930,LBS2DIAQ(J.pdf
Voltage - Collector Emitter Breakdown (Max) 180V Vce Saturation (Max) @ Ib, Ic 1V @ 100mA, 1A
Transistor Type PNP Supplier Device Package TO-220NIS
Series - Power - Max 2W
Packaging Bulk Package / Case TO-220-3 Full Pack
Other Names 2SA1930LBS2DIAQ(J
2SA1930LBS2DIAQJ
Operating Temperature 150°C (TJ)
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 200MHz
Detailed Description Bipolar (BJT) Transistor PNP 180V 2A 200MHz 2W Through Hole TO-220NIS DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 5V
Current - Collector Cutoff (Max) 5µA (ICBO) Current - Collector (Ic) (Max) 2A
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