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2N6426G

2N6426G

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AMI Semiconductor / ON Semiconductor

Part Number:: 2N6426G

Manufacturer/Brand:: AMI Semiconductor / ON Semiconductor

Product Description:: TRANS NPN DARL 40V 0.5A TO92

Datasheets:: 2N6426G.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 3996 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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2N6426G

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Specifications of 2N6426G

AMI Semiconductor / ON Semiconductor

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Part Number	2N6426G	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN DARL 40V 0.5A TO92	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	3996 pcs stock	Data sheet	2N6426G.pdf
Voltage - Collector Emitter Breakdown (Max)	40V	Vce Saturation (Max) @ Ib, Ic	1.5V @ 500µA, 500mA
Transistor Type	NPN - Darlington	Supplier Device Package	TO-92-3
Series	-	Power - Max	625mW
Packaging	Bulk	Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Other Names	2N6426GOS	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	-
Detailed Description	Bipolar (BJT) Transistor NPN - Darlington 40V 500mA 625mW Through Hole TO-92-3	DC Current Gain (hFE) (Min) @ Ic, Vce	30000 @ 100mA, 5V
Current - Collector Cutoff (Max)	1µA	Current - Collector (Ic) (Max)	500mA
Base Part Number	2N6426

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Part Number	2N6426G	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN DARL 40V 0.5A TO92	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	3996 pcs stock	Data sheet	2N6426G.pdf
Voltage - Collector Emitter Breakdown (Max)	40V	Vce Saturation (Max) @ Ib, Ic	1.5V @ 500µA, 500mA
Transistor Type	NPN - Darlington	Supplier Device Package	TO-92-3
Series	-	Power - Max	625mW
Packaging	Bulk	Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Other Names	2N6426GOS	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	-
Detailed Description	Bipolar (BJT) Transistor NPN - Darlington 40V 500mA 625mW Through Hole TO-92-3	DC Current Gain (hFE) (Min) @ Ic, Vce	30000 @ 100mA, 5V
Current - Collector Cutoff (Max)	1µA	Current - Collector (Ic) (Max)	500mA
Base Part Number	2N6426