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2N2222A

2N2222A

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Central Semiconductor

Part Number:: 2N2222A

Manufacturer/Brand:: Central Semiconductor

Product Description:: TRANS NPN 40V 0.8A TO-18

Datasheets:: 2N2222A.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 97873 pcs stock

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2N2222A

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Specifications of 2N2222A

Central Semiconductor

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Part Number	2N2222A	Manufacturer	Central Semiconductor
Description	TRANS NPN 40V 0.8A TO-18	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	97873 pcs stock	Data sheet	2N2222A.pdf
Voltage - Collector Emitter Breakdown (Max)	40V	Vce Saturation (Max) @ Ib, Ic	1V @ 50mA, 500mA
Transistor Type	NPN	Supplier Device Package	TO-18
Series	-	Power - Max	500mW
Packaging	Bulk	Package / Case	TO-206AA, TO-18-3 Metal Can
Other Names	2N2222A LEAD FREE 2N2222A PBFREE 2N2222ACS	Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	16 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	300MHz	Detailed Description	Bipolar (BJT) Transistor NPN 40V 800mA 300MHz 500mW Through Hole TO-18
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V	Current - Collector Cutoff (Max)	10nA (ICBO)
Current - Collector (Ic) (Max)	800mA

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Part Number	2N2222A	Manufacturer	Central Semiconductor
Description	TRANS NPN 40V 0.8A TO-18	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	97873 pcs stock	Data sheet	2N2222A.pdf
Voltage - Collector Emitter Breakdown (Max)	40V	Vce Saturation (Max) @ Ib, Ic	1V @ 50mA, 500mA
Transistor Type	NPN	Supplier Device Package	TO-18
Series	-	Power - Max	500mW
Packaging	Bulk	Package / Case	TO-206AA, TO-18-3 Metal Can
Other Names	2N2222A LEAD FREE 2N2222A PBFREE 2N2222ACS	Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	16 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	300MHz	Detailed Description	Bipolar (BJT) Transistor NPN 40V 800mA 300MHz 500mW Through Hole TO-18
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V	Current - Collector Cutoff (Max)	10nA (ICBO)
Current - Collector (Ic) (Max)	800mA