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2SA1182-Y,LF

2SA1182-Y,LF

2SA1182-Y,LF
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See specifications for product details.
Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
Part Number:
2SA1182-Y,LF
Manufacturer/Brand:
Toshiba Semiconductor and Storage
Product Description:
TRANS PNP 30V 0.5A S-MINI
Datasheets:
2SA1182-Y,LF.pdf
RoHs Status:
Lead free / RoHS Compliant
Stock Condition:
1122511 pcs stock
Ship From:
Shipment Way:
DHL/Fedex/TNT/UPS/EMS

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In Stock 1122511 pcs Reference Price(In US Dollars)

  • 3000 pcs
    $0.022
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Specifications of 2SA1182-Y,LF

Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
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Part Number 2SA1182-Y,LF Manufacturer Toshiba Semiconductor and Storage
Description TRANS PNP 30V 0.5A S-MINI Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 1122511 pcs stock Data sheet 2SA1182-Y,LF.pdf
Voltage - Collector Emitter Breakdown (Max) 30V Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Transistor Type PNP Supplier Device Package S-Mini
Series - Power - Max 150mW
Packaging Tape & Reel (TR) Package / Case TO-236-3, SC-59, SOT-23-3
Other Names 2SA1182-Y (TE85L,F)
2SA1182-Y(TE85L,F)
2SA1182-Y(TE85LF)TR
2SA1182-Y(TE85LF)TR-ND
2SA1182-Y,LF(B
2SA1182-Y,LF(T
2SA1182-YLF(BTR
2SA1182-YLF(BTR-ND
2SA1182-YLFTR
2SA1182YLFTR
2SA1182YLFTR-ND
Operating Temperature 125°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 12 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 200MHz Detailed Description Bipolar (BJT) Transistor PNP 30V 500mA 200MHz 150mW Surface Mount S-Mini
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA, 1V Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 500mA  
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