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2SA1943N(S1,E,S)

2SA1943N(S1,E,S)

2SA1943N(S1,E,S)
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Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
Part Number:
2SA1943N(S1,E,S)
Manufacturer/Brand:
Toshiba Semiconductor and Storage
Product Description:
TRANS PNP 230V 15A TO-3PN
Datasheets:
2SA1943N(S1,E,S).pdf
RoHs Status:
Lead free / RoHS Compliant
Stock Condition:
82446 pcs stock
Ship From:
Shipment Way:
DHL/Fedex/TNT/UPS/EMS

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In Stock 82446 pcs Reference Price(In US Dollars)

  • 1 pcs
    $0.926
  • 10 pcs
    $0.837
  • 25 pcs
    $0.748
  • 100 pcs
    $0.673
  • 250 pcs
    $0.598
  • 500 pcs
    $0.523
  • 1000 pcs
    $0.434
  • 2500 pcs
    $0.404
Target Price(USD):
Qty:
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Total: $0.000
2SA1943N(S1,E,S)
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2SA1943N(S1,E,S)

Specifications of 2SA1943N(S1,E,S)

Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
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Part Number 2SA1943N(S1,E,S) Manufacturer Toshiba Semiconductor and Storage
Description TRANS PNP 230V 15A TO-3PN Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 82446 pcs stock Data sheet 2SA1943N(S1,E,S).pdf
Voltage - Collector Emitter Breakdown (Max) 230V Vce Saturation (Max) @ Ib, Ic 3V @ 800mA, 8A
Transistor Type PNP Supplier Device Package TO-3P(N)
Series - Power - Max 150W
Packaging Tube Package / Case TO-3P-3, SC-65-3
Other Names 2SA1943N(S1ES) Operating Temperature 150°C (TJ)
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 12 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 30MHz Detailed Description Bipolar (BJT) Transistor PNP 230V 15A 30MHz 150W Through Hole TO-3P(N)
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 1A, 5V Current - Collector Cutoff (Max) 5µA (ICBO)
Current - Collector (Ic) (Max) 15A  
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