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2N2484

2N2484

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Microsemi

Part Number:: 2N2484

Manufacturer/Brand:: Microsemi

Product Description:: TRANS NPN 60V 0.05A TO-18

Datasheets:: 2N2484.pdf

RoHs Status:: Contains lead / RoHS non-compliant

Stock Condition:: 7929 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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In Stock 7929 pcs Reference Price(In US Dollars)

1 pcs
$5.878
10 pcs
$5.344
25 pcs
$4.943
100 pcs
$4.542
250 pcs
$4.141

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2N2484

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Specifications of 2N2484

Microsemi

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Part Number	2N2484	Manufacturer	Microsemi
Description	TRANS NPN 60V 0.05A TO-18	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Quantity Available	7929 pcs stock	Data sheet	2N2484.pdf
Voltage - Collector Emitter Breakdown (Max)	60V	Vce Saturation (Max) @ Ib, Ic	300mV @ 100µA, 1mA
Transistor Type	NPN	Supplier Device Package	TO-18
Series	-	Power - Max	360mW
Packaging	Tube	Package / Case	TO-206AA, TO-18-3 Metal Can
Other Names	2N2484MS	Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	12 Weeks	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Frequency - Transition	-	Detailed Description	Bipolar (BJT) Transistor NPN 60V 50mA 360mW Through Hole TO-18
DC Current Gain (hFE) (Min) @ Ic, Vce	225 @ 10mA, 5V	Current - Collector Cutoff (Max)	2nA
Current - Collector (Ic) (Max)	50mA

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Part Number	2N2484	Manufacturer	Microsemi
Description	TRANS NPN 60V 0.05A TO-18	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Quantity Available	7929 pcs stock	Data sheet	2N2484.pdf
Voltage - Collector Emitter Breakdown (Max)	60V	Vce Saturation (Max) @ Ib, Ic	300mV @ 100µA, 1mA
Transistor Type	NPN	Supplier Device Package	TO-18
Series	-	Power - Max	360mW
Packaging	Tube	Package / Case	TO-206AA, TO-18-3 Metal Can
Other Names	2N2484MS	Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	12 Weeks	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Frequency - Transition	-	Detailed Description	Bipolar (BJT) Transistor NPN 60V 50mA 360mW Through Hole TO-18
DC Current Gain (hFE) (Min) @ Ic, Vce	225 @ 10mA, 5V	Current - Collector Cutoff (Max)	2nA
Current - Collector (Ic) (Max)	50mA