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JANTX2N3439

JANTX2N3439

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Microsemi

Part Number:: JANTX2N3439

Manufacturer/Brand:: Microsemi

Product Description:: TRANS NPN 350V 1A

Datasheets:: JANTX2N3439.pdf

RoHs Status:: Contains lead / RoHS non-compliant

Stock Condition:: 5116 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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In Stock 5116 pcs Reference Price(In US Dollars)

100 pcs
$5.826

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Specifications of JANTX2N3439

Microsemi

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Part Number	JANTX2N3439	Manufacturer	Microsemi
Description	TRANS NPN 350V 1A	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Quantity Available	5116 pcs stock	Data sheet	JANTX2N3439.pdf
Voltage - Collector Emitter Breakdown (Max)	350V	Vce Saturation (Max) @ Ib, Ic	500mV @ 4mA, 50mA
Transistor Type	NPN	Supplier Device Package	TO-39
Series	Military, MIL-PRF-19500/368	Power - Max	800mW
Packaging	Bulk	Package / Case	TO-205AD, TO-39-3 Metal Can
Other Names	1086-2695 1086-2695-MIL	Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	20 Weeks	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Frequency - Transition	-	Detailed Description	Bipolar (BJT) Transistor NPN 350V 1A 800mW Through Hole TO-39
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 20mA, 10V	Current - Collector Cutoff (Max)	2µA
Current - Collector (Ic) (Max)	1A

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Part Number	JANTX2N3439	Manufacturer	Microsemi
Description	TRANS NPN 350V 1A	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Quantity Available	5116 pcs stock	Data sheet	JANTX2N3439.pdf
Voltage - Collector Emitter Breakdown (Max)	350V	Vce Saturation (Max) @ Ib, Ic	500mV @ 4mA, 50mA
Transistor Type	NPN	Supplier Device Package	TO-39
Series	Military, MIL-PRF-19500/368	Power - Max	800mW
Packaging	Bulk	Package / Case	TO-205AD, TO-39-3 Metal Can
Other Names	1086-2695 1086-2695-MIL	Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	20 Weeks	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Frequency - Transition	-	Detailed Description	Bipolar (BJT) Transistor NPN 350V 1A 800mW Through Hole TO-39
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 20mA, 10V	Current - Collector Cutoff (Max)	2µA
Current - Collector (Ic) (Max)	1A