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MJ11030

MJ11030

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• Specifications

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AMI Semiconductor / ON Semiconductor

Specifications of MJ11030

AMI Semiconductor / ON Semiconductor

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Part Number	MJ11030	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN DARL 90V 50A TO-3	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Quantity Available	4571 pcs stock	Data sheet	MJ11030.pdf
Voltage - Collector Emitter Breakdown (Max)	90V	Vce Saturation (Max) @ Ib, Ic	3.5V @ 500mA, 50A
Transistor Type	NPN - Darlington	Supplier Device Package	TO-3
Series	-	Power - Max	300W
Packaging	Tray	Package / Case	TO-204AE
Operating Temperature	-55°C ~ 200°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Frequency - Transition	-	Detailed Description	Bipolar (BJT) Transistor NPN - Darlington 90V 50A 300W Through Hole TO-3
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 25A, 5V	Current - Collector Cutoff (Max)	2mA
Current - Collector (Ic) (Max)	50A

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• Part Number	MJ11030	Manufacturer	AMI Semiconductor / ON Semiconductor
  Description	TRANS NPN DARL 90V 50A TO-3	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
  Quantity Available	4571 pcs stock	Data sheet	MJ11030.pdf
  Voltage - Collector Emitter Breakdown (Max)	90V	Vce Saturation (Max) @ Ib, Ic	3.5V @ 500mA, 50A
  Transistor Type	NPN - Darlington	Supplier Device Package	TO-3
  Series	-	Power - Max	300W
  Packaging	Tray	Package / Case	TO-204AE
  Operating Temperature	-55°C ~ 200°C (TJ)	Mounting Type	Through Hole
  Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
  Frequency - Transition	-	Detailed Description	Bipolar (BJT) Transistor NPN - Darlington 90V 50A 300W Through Hole TO-3
  DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 25A, 5V	Current - Collector Cutoff (Max)	2mA
  Current - Collector (Ic) (Max)	50A

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