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KSP25TA

KSP25TA

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Specifications

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AMI Semiconductor / ON Semiconductor

Part Number:: KSP25TA

Manufacturer/Brand:: AMI Semiconductor / ON Semiconductor

Product Description:: TRANS NPN DARL 40V 0.5A TO-92

Datasheets:: KSP25TA.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 5828 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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Specifications of KSP25TA

AMI Semiconductor / ON Semiconductor

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Part Number	KSP25TA	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN DARL 40V 0.5A TO-92	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5828 pcs stock	Data sheet	KSP25TA.pdf
Voltage - Collector Emitter Breakdown (Max)	40V	Vce Saturation (Max) @ Ib, Ic	1.5V @ 100µA, 100mA
Transistor Type	NPN - Darlington	Supplier Device Package	TO-92-3
Series	-	Power - Max	625mW
Packaging	Tape & Box (TB)	Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Operating Temperature	150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	-	Detailed Description	Bipolar (BJT) Transistor NPN - Darlington 40V 500mA 625mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce	10000 @ 100mA, 5V	Current - Collector Cutoff (Max)	100nA (ICBO)
Current - Collector (Ic) (Max)	500mA

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Part Number	KSP25TA	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN DARL 40V 0.5A TO-92	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5828 pcs stock	Data sheet	KSP25TA.pdf
Voltage - Collector Emitter Breakdown (Max)	40V	Vce Saturation (Max) @ Ib, Ic	1.5V @ 100µA, 100mA
Transistor Type	NPN - Darlington	Supplier Device Package	TO-92-3
Series	-	Power - Max	625mW
Packaging	Tape & Box (TB)	Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Operating Temperature	150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	-	Detailed Description	Bipolar (BJT) Transistor NPN - Darlington 40V 500mA 625mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce	10000 @ 100mA, 5V	Current - Collector Cutoff (Max)	100nA (ICBO)
Current - Collector (Ic) (Max)	500mA