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BD810G

BD810G

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AMI Semiconductor / ON Semiconductor

Part Number:: BD810G

Manufacturer/Brand:: AMI Semiconductor / ON Semiconductor

Product Description:: TRANS PNP 80V 10A TO-220AB

Datasheets:: BD810G.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 128352 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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In Stock 128352 pcs Reference Price(In US Dollars)

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BD810G

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Specifications of BD810G

AMI Semiconductor / ON Semiconductor

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Part Number	BD810G	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS PNP 80V 10A TO-220AB	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	128352 pcs stock	Data sheet	BD810G.pdf
Voltage - Collector Emitter Breakdown (Max)	80V	Vce Saturation (Max) @ Ib, Ic	1.1V @ 300mA, 3A
Transistor Type	PNP	Supplier Device Package	TO-220AB
Series	-	Power - Max	90W
Packaging	Tube	Package / Case	TO-220-3
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Manufacturer Standard Lead Time	2 Weeks
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	1.5MHz
Detailed Description	Bipolar (BJT) Transistor PNP 80V 10A 1.5MHz 90W Through Hole TO-220AB	DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 4A, 2V
Current - Collector Cutoff (Max)	1mA (ICBO)	Current - Collector (Ic) (Max)	10A

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Part Number	BD810G	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS PNP 80V 10A TO-220AB	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	128352 pcs stock	Data sheet	BD810G.pdf
Voltage - Collector Emitter Breakdown (Max)	80V	Vce Saturation (Max) @ Ib, Ic	1.1V @ 300mA, 3A
Transistor Type	PNP	Supplier Device Package	TO-220AB
Series	-	Power - Max	90W
Packaging	Tube	Package / Case	TO-220-3
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Manufacturer Standard Lead Time	2 Weeks
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	1.5MHz
Detailed Description	Bipolar (BJT) Transistor PNP 80V 10A 1.5MHz 90W Through Hole TO-220AB	DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 4A, 2V
Current - Collector Cutoff (Max)	1mA (ICBO)	Current - Collector (Ic) (Max)	10A