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2N6517TA

2N6517TA

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Fairchild/ON Semiconductor

Part Number:: 2N6517TA

Manufacturer/Brand:: Fairchild/ON Semiconductor

Product Description:: TRANS NPN 350V 0.5A TO-92

Datasheets:: 2N6517TA.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 1314607 pcs stock

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2N6517TA

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Specifications of 2N6517TA

Fairchild/ON Semiconductor

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Part Number	2N6517TA	Manufacturer	Fairchild/ON Semiconductor
Description	TRANS NPN 350V 0.5A TO-92	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	1314607 pcs stock	Data sheet	2N6517TA.pdf
Voltage - Collector Emitter Breakdown (Max)	500mA	Voltage - Breakdown	TO-92-3
Vce Saturation (Max) @ Ib, Ic	350V	Series	-
RoHS Status	Cut Tape (CT)	Resistor - Base (R1) (Ohms)	200MHz
Power - Max	625mW	Polarization	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Other Names	2N6517TACT	Operating Temperature	150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	6 Weeks	Manufacturer Part Number	2N6517TA
Frequency - Transition	20 @ 50mA, 10V	Expanded Description	Bipolar (BJT) Transistor NPN 350V 500mA 200MHz 625mW Through Hole TO-92-3
Description	TRANS NPN 350V 0.5A TO-92	DC Current Gain (hFE) (Min) @ Ic, Vce	50nA (ICBO)
Current - Collector Cutoff (Max)	1V @ 5mA, 50mA	Current - Collector (Ic) (Max)	NPN

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Part Number	2N6517TA	Manufacturer	Fairchild/ON Semiconductor
Description	TRANS NPN 350V 0.5A TO-92	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	1314607 pcs stock	Data sheet	2N6517TA.pdf
Voltage - Collector Emitter Breakdown (Max)	500mA	Voltage - Breakdown	TO-92-3
Vce Saturation (Max) @ Ib, Ic	350V	Series	-
RoHS Status	Cut Tape (CT)	Resistor - Base (R1) (Ohms)	200MHz
Power - Max	625mW	Polarization	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Other Names	2N6517TACT	Operating Temperature	150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	6 Weeks	Manufacturer Part Number	2N6517TA
Frequency - Transition	20 @ 50mA, 10V	Expanded Description	Bipolar (BJT) Transistor NPN 350V 500mA 200MHz 625mW Through Hole TO-92-3
Description	TRANS NPN 350V 0.5A TO-92	DC Current Gain (hFE) (Min) @ Ic, Vce	50nA (ICBO)
Current - Collector Cutoff (Max)	1V @ 5mA, 50mA	Current - Collector (Ic) (Max)	NPN