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2N1711

2N1711

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Central Semiconductor

Part Number:: 2N1711

Manufacturer/Brand:: Central Semiconductor

Product Description:: TRANS NPN 50V 0.5A TO-39

Datasheets:: 2N1711.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 67666 pcs stock

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In Stock 67666 pcs Reference Price(In US Dollars)

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2N1711

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Specifications of 2N1711

Central Semiconductor

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Part Number	2N1711	Manufacturer	Central Semiconductor
Description	TRANS NPN 50V 0.5A TO-39	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	67666 pcs stock	Data sheet	2N1711.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	1.5V @ 15mA, 150mA
Transistor Type	NPN	Supplier Device Package	TO-39
Series	-	Power - Max	800mW
Packaging	Tube	Package / Case	TO-205AD, TO-39-3 Metal Can
Other Names	2N1711 LEAD FREE 2N1711 PBFREE 2N1711CS	Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	16 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	70MHz	Detailed Description	Bipolar (BJT) Transistor NPN 50V 500mA 70MHz 800mW Through Hole TO-39
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V	Current - Collector Cutoff (Max)	10nA (ICBO)
Current - Collector (Ic) (Max)	500mA

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Part Number	2N1711	Manufacturer	Central Semiconductor
Description	TRANS NPN 50V 0.5A TO-39	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	67666 pcs stock	Data sheet	2N1711.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	1.5V @ 15mA, 150mA
Transistor Type	NPN	Supplier Device Package	TO-39
Series	-	Power - Max	800mW
Packaging	Tube	Package / Case	TO-205AD, TO-39-3 Metal Can
Other Names	2N1711 LEAD FREE 2N1711 PBFREE 2N1711CS	Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	16 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	70MHz	Detailed Description	Bipolar (BJT) Transistor NPN 50V 500mA 70MHz 800mW Through Hole TO-39
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V	Current - Collector Cutoff (Max)	10nA (ICBO)
Current - Collector (Ic) (Max)	500mA