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2SB1481(TOJS,Q,M)

2SB1481(TOJS,Q,M)

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Toshiba Semiconductor and Storage

Part Number:: 2SB1481(TOJS,Q,M)

Manufacturer/Brand:: Toshiba Semiconductor and Storage

Product Description:: TRANS PNP 4A 100V TO220-3

Datasheets:: 2SB1481(TOJS,Q,M).pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 4140 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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2SB1481(TOJS,Q,M)

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Specifications of 2SB1481(TOJS,Q,M)

Toshiba Semiconductor and Storage

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Part Number	2SB1481(TOJS,Q,M)	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS PNP 4A 100V TO220-3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4140 pcs stock	Data sheet	2SB1481(TOJS,Q,M).pdf
Voltage - Collector Emitter Breakdown (Max)	100V	Vce Saturation (Max) @ Ib, Ic	1.5V @ 6mA, 3A
Transistor Type	PNP	Supplier Device Package	TO-220NIS
Series	-	Power - Max	2W
Packaging	Bulk	Package / Case	TO-220-3 Full Pack
Other Names	2SB1481(TOJSQM) 2SB1481TOJSQM	Operating Temperature	150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	-
Detailed Description	Bipolar (BJT) Transistor PNP 100V 4A 2W Through Hole TO-220NIS	DC Current Gain (hFE) (Min) @ Ic, Vce	2000 @ 3A, 2V
Current - Collector Cutoff (Max)	2µA (ICBO)	Current - Collector (Ic) (Max)	4A

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Part Number	2SB1481(TOJS,Q,M)	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS PNP 4A 100V TO220-3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4140 pcs stock	Data sheet	2SB1481(TOJS,Q,M).pdf
Voltage - Collector Emitter Breakdown (Max)	100V	Vce Saturation (Max) @ Ib, Ic	1.5V @ 6mA, 3A
Transistor Type	PNP	Supplier Device Package	TO-220NIS
Series	-	Power - Max	2W
Packaging	Bulk	Package / Case	TO-220-3 Full Pack
Other Names	2SB1481(TOJSQM) 2SB1481TOJSQM	Operating Temperature	150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	-
Detailed Description	Bipolar (BJT) Transistor PNP 100V 4A 2W Through Hole TO-220NIS	DC Current Gain (hFE) (Min) @ Ic, Vce	2000 @ 3A, 2V
Current - Collector Cutoff (Max)	2µA (ICBO)	Current - Collector (Ic) (Max)	4A