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2SCR523MT2L

2SCR523MT2L

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LAPIS Semiconductor

Part Number:: 2SCR523MT2L

Manufacturer/Brand:: LAPIS Semiconductor

Product Description:: TRANS NPN 50V 0.1A VMT3

Datasheets:: 1.2SCR523MT2L.pdf 2.2SCR523MT2L.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 1195311 pcs stock

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In Stock 1195311 pcs Reference Price(In US Dollars)

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2SCR523MT2L

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Specifications of 2SCR523MT2L

LAPIS Semiconductor

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Part Number	2SCR523MT2L	Manufacturer	LAPIS Semiconductor
Description	TRANS NPN 50V 0.1A VMT3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	1195311 pcs stock	Data sheet	1.2SCR523MT2L.pdf 2.2SCR523MT2L.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	300mV @ 5mA, 50mA
Transistor Type	NPN	Supplier Device Package	VMT3
Series	-	Power - Max	150mW
Packaging	Cut Tape (CT)	Package / Case	SOT-723
Other Names	2SCR523MT2LCT	Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	10 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	350MHz	Detailed Description	Bipolar (BJT) Transistor NPN 50V 100mA 350MHz 150mW Surface Mount VMT3
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 6V	Current - Collector Cutoff (Max)	100nA (ICBO)
Current - Collector (Ic) (Max)	100mA

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Part Number	2SCR523MT2L	Manufacturer	LAPIS Semiconductor
Description	TRANS NPN 50V 0.1A VMT3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	1195311 pcs stock	Data sheet	1.2SCR523MT2L.pdf 2.2SCR523MT2L.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	300mV @ 5mA, 50mA
Transistor Type	NPN	Supplier Device Package	VMT3
Series	-	Power - Max	150mW
Packaging	Cut Tape (CT)	Package / Case	SOT-723
Other Names	2SCR523MT2LCT	Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	10 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	350MHz	Detailed Description	Bipolar (BJT) Transistor NPN 50V 100mA 350MHz 150mW Surface Mount VMT3
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 6V	Current - Collector Cutoff (Max)	100nA (ICBO)
Current - Collector (Ic) (Max)	100mA