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BC848BWT106

BC848BWT106

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LAPIS Semiconductor

Part Number:: BC848BWT106

Manufacturer/Brand:: LAPIS Semiconductor

Product Description:: TRANS NPN 30V 0.1A SOT-323

Datasheets:: 1.BC848BWT106.pdf 2.BC848BWT106.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 777648 pcs stock

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Specifications of BC848BWT106

LAPIS Semiconductor

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Part Number	BC848BWT106	Manufacturer	LAPIS Semiconductor
Description	TRANS NPN 30V 0.1A SOT-323	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	777648 pcs stock	Data sheet	1.BC848BWT106.pdf 2.BC848BWT106.pdf
Voltage - Collector Emitter Breakdown (Max)	30V	Vce Saturation (Max) @ Ib, Ic	600mV @ 5mA, 100mA
Transistor Type	NPN	Supplier Device Package	UMT3
Series	-	Power - Max	200mW
Packaging	Tape & Reel (TR)	Package / Case	SC-70, SOT-323
Other Names	BC848BWT106-ND BC848BWT106TR	Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	10 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	200MHz	Detailed Description	Bipolar (BJT) Transistor NPN 30V 100mA 200MHz 200mW Surface Mount UMT3
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA, 5V	Current - Collector Cutoff (Max)	100nA (ICBO)
Current - Collector (Ic) (Max)	100mA

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Part Number	BC848BWT106	Manufacturer	LAPIS Semiconductor
Description	TRANS NPN 30V 0.1A SOT-323	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	777648 pcs stock	Data sheet	1.BC848BWT106.pdf 2.BC848BWT106.pdf
Voltage - Collector Emitter Breakdown (Max)	30V	Vce Saturation (Max) @ Ib, Ic	600mV @ 5mA, 100mA
Transistor Type	NPN	Supplier Device Package	UMT3
Series	-	Power - Max	200mW
Packaging	Tape & Reel (TR)	Package / Case	SC-70, SOT-323
Other Names	BC848BWT106-ND BC848BWT106TR	Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	10 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	200MHz	Detailed Description	Bipolar (BJT) Transistor NPN 30V 100mA 200MHz 200mW Surface Mount UMT3
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA, 5V	Current - Collector Cutoff (Max)	100nA (ICBO)
Current - Collector (Ic) (Max)	100mA