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2N5581

2N5581

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Microsemi

Part Number:: 2N5581

Manufacturer/Brand:: Microsemi

Product Description:: TRANS NPN 50V 0.8A TO46

Datasheets:: 2N5581.pdf

RoHs Status:: Contains lead / RoHS non-compliant

Stock Condition:: 10204 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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In Stock 10204 pcs Reference Price(In US Dollars)

117 pcs
$3.281

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2N5581

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Specifications of 2N5581

Microsemi

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Part Number	2N5581	Manufacturer	Microsemi
Description	TRANS NPN 50V 0.8A TO46	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Quantity Available	10204 pcs stock	Data sheet	2N5581.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	1V @ 50mA, 500mA
Transistor Type	NPN	Supplier Device Package	TO-46 (TO-206AB)
Series	-	Power - Max	500mW
Packaging	Bulk	Package / Case	TO-206AB, TO-46-3 Metal Can
Other Names	1086-21055 1086-21055-MIL	Operating Temperature	-55°C ~ 200°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	12 Weeks	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Frequency - Transition	-	Detailed Description	Bipolar (BJT) Transistor NPN 50V 800mA 500mW Through Hole TO-46 (TO-206AB)
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 150mA, 10V	Current - Collector Cutoff (Max)	10µA (ICBO)
Current - Collector (Ic) (Max)	800mA

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Part Number	2N5581	Manufacturer	Microsemi
Description	TRANS NPN 50V 0.8A TO46	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Quantity Available	10204 pcs stock	Data sheet	2N5581.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	1V @ 50mA, 500mA
Transistor Type	NPN	Supplier Device Package	TO-46 (TO-206AB)
Series	-	Power - Max	500mW
Packaging	Bulk	Package / Case	TO-206AB, TO-46-3 Metal Can
Other Names	1086-21055 1086-21055-MIL	Operating Temperature	-55°C ~ 200°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	12 Weeks	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Frequency - Transition	-	Detailed Description	Bipolar (BJT) Transistor NPN 50V 800mA 500mW Through Hole TO-46 (TO-206AB)
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 150mA, 10V	Current - Collector Cutoff (Max)	10µA (ICBO)
Current - Collector (Ic) (Max)	800mA