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TTC0002(Q)

TTC0002(Q)

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Toshiba Semiconductor and Storage

Part Number:: TTC0002(Q)

Manufacturer/Brand:: Toshiba Semiconductor and Storage

Product Description:: TRANS NPN 160V 18A TO-3PL

Datasheets:: TTC0002(Q).pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 31413 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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In Stock 31413 pcs Reference Price(In US Dollars)

100 pcs
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Specifications of TTC0002(Q)

Toshiba Semiconductor and Storage

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Part Number	TTC0002(Q)	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS NPN 160V 18A TO-3PL	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	31413 pcs stock	Data sheet	TTC0002(Q).pdf
Voltage - Collector Emitter Breakdown (Max)	160V	Vce Saturation (Max) @ Ib, Ic	2V @ 900mA, 9A
Transistor Type	NPN	Supplier Device Package	TO-3P(L)
Series	-	Power - Max	180W
Packaging	Bulk	Package / Case	TO-3PL
Other Names	TTC0002Q	Operating Temperature	150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	16 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	30MHz	Detailed Description	Bipolar (BJT) Transistor NPN 160V 18A 30MHz 180W Through Hole TO-3P(L)
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 1A, 5V	Current - Collector Cutoff (Max)	1µA (ICBO)
Current - Collector (Ic) (Max)	18A

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Part Number	TTC0002(Q)	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS NPN 160V 18A TO-3PL	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	31413 pcs stock	Data sheet	TTC0002(Q).pdf
Voltage - Collector Emitter Breakdown (Max)	160V	Vce Saturation (Max) @ Ib, Ic	2V @ 900mA, 9A
Transistor Type	NPN	Supplier Device Package	TO-3P(L)
Series	-	Power - Max	180W
Packaging	Bulk	Package / Case	TO-3PL
Other Names	TTC0002Q	Operating Temperature	150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	16 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	30MHz	Detailed Description	Bipolar (BJT) Transistor NPN 160V 18A 30MHz 180W Through Hole TO-3P(L)
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 1A, 5V	Current - Collector Cutoff (Max)	1µA (ICBO)
Current - Collector (Ic) (Max)	18A