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2N6671

2N6671

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Specifications

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Microsemi

Part Number:: 2N6671

Manufacturer/Brand:: Microsemi

Product Description:: TRANS PNP 300V 8A TO-3

Datasheets:

RoHs Status:: Contains lead / RoHS non-compliant

Stock Condition:: 5116 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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Specifications of 2N6671

Microsemi

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Part Number	2N6671	Manufacturer	Microsemi
Description	TRANS PNP 300V 8A TO-3	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Quantity Available	5116 pcs stock	Data sheet
Voltage - Collector Emitter Breakdown (Max)	300V	Vce Saturation (Max) @ Ib, Ic	-
Transistor Type	PNP	Supplier Device Package	TO-3
Series	-	Power - Max	150W
Packaging	Bulk	Package / Case	TO-204AA, TO-3
Operating Temperature	-	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Frequency - Transition	-	Detailed Description	Bipolar (BJT) Transistor PNP 300V 8A 150W Through Hole TO-3
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 8A, 300V	Current - Collector Cutoff (Max)	-
Current - Collector (Ic) (Max)	8A

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Part Number	2N6671	Manufacturer	Microsemi
Description	TRANS PNP 300V 8A TO-3	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Quantity Available	5116 pcs stock	Data sheet
Voltage - Collector Emitter Breakdown (Max)	300V	Vce Saturation (Max) @ Ib, Ic	-
Transistor Type	PNP	Supplier Device Package	TO-3
Series	-	Power - Max	150W
Packaging	Bulk	Package / Case	TO-204AA, TO-3
Operating Temperature	-	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Frequency - Transition	-	Detailed Description	Bipolar (BJT) Transistor PNP 300V 8A 150W Through Hole TO-3
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 8A, 300V	Current - Collector Cutoff (Max)	-
Current - Collector (Ic) (Max)	8A