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2N5308_D26Z

2N5308_D26Z

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AMI Semiconductor / ON Semiconductor

Part Number:: 2N5308_D26Z

Manufacturer/Brand:: AMI Semiconductor / ON Semiconductor

Product Description:: TRANS NPN DARL 40V 1.2A TO-92

Datasheets:: 2N5308_D26Z.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 5075 pcs stock

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Specifications of 2N5308_D26Z

AMI Semiconductor / ON Semiconductor

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Part Number	2N5308_D26Z	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN DARL 40V 1.2A TO-92	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5075 pcs stock	Data sheet	2N5308_D26Z.pdf
Voltage - Collector Emitter Breakdown (Max)	40V	Vce Saturation (Max) @ Ib, Ic	1.4V @ 200µA, 200mA
Transistor Type	NPN - Darlington	Supplier Device Package	TO-92-3
Series	-	Power - Max	625mW
Packaging	Tape & Reel (TR)	Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	-	Detailed Description	Bipolar (BJT) Transistor NPN - Darlington 40V 1.2A 625mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce	7000 @ 2mA, 5V	Current - Collector Cutoff (Max)	100nA (ICBO)
Current - Collector (Ic) (Max)	1.2A	Base Part Number	2N5308

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Part Number	2N5308_D26Z	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN DARL 40V 1.2A TO-92	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5075 pcs stock	Data sheet	2N5308_D26Z.pdf
Voltage - Collector Emitter Breakdown (Max)	40V	Vce Saturation (Max) @ Ib, Ic	1.4V @ 200µA, 200mA
Transistor Type	NPN - Darlington	Supplier Device Package	TO-92-3
Series	-	Power - Max	625mW
Packaging	Tape & Reel (TR)	Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	-	Detailed Description	Bipolar (BJT) Transistor NPN - Darlington 40V 1.2A 625mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce	7000 @ 2mA, 5V	Current - Collector Cutoff (Max)	100nA (ICBO)
Current - Collector (Ic) (Max)	1.2A	Base Part Number	2N5308