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2SA1955FVBTPL3Z

2SA1955FVBTPL3Z

2SA1955FVBTPL3Z
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See specifications for product details.
Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
Part Number:
2SA1955FVBTPL3Z
Manufacturer/Brand:
Toshiba Semiconductor and Storage
Product Description:
TRANS PNP 12V 0.4A VESM
Datasheets:
2SA1955FVBTPL3Z.pdf
RoHs Status:
Lead free / RoHS Compliant
Stock Condition:
801021 pcs stock
Ship From:
Shipment Way:
DHL/Fedex/TNT/UPS/EMS

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In Stock 801021 pcs Reference Price(In US Dollars)

  • 1 pcs
    $0.196
  • 10 pcs
    $0.14
  • 25 pcs
    $0.109
  • 100 pcs
    $0.083
  • 250 pcs
    $0.058
  • 500 pcs
    $0.047
  • 1000 pcs
    $0.036
  • 2500 pcs
    $0.031
Target Price(USD):
Qty:
Please give us your target price if quantities greater than those displayed.
Total: $0.000
2SA1955FVBTPL3Z
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2SA1955FVBTPL3Z

Specifications of 2SA1955FVBTPL3Z

Toshiba Semiconductor and StorageToshiba Semiconductor and Storage
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Part Number 2SA1955FVBTPL3Z Manufacturer Toshiba Semiconductor and Storage
Description TRANS PNP 12V 0.4A VESM Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 801021 pcs stock Data sheet 2SA1955FVBTPL3Z.pdf
Voltage - Collector Emitter Breakdown (Max) 12V Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 200mA
Transistor Type PNP Supplier Device Package VESM
Series - Power - Max 100mW
Packaging Original-Reel® Package / Case SOT-723
Other Names 2SA1955FVBTPL3ZDKR Operating Temperature 150°C (TJ)
Mounting Type Surface Mount Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 130MHz
Detailed Description Bipolar (BJT) Transistor PNP 12V 400mA 130MHz 100mW Surface Mount VESM DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 10mA, 2V
Current - Collector Cutoff (Max) 100nA (ICBO) Current - Collector (Ic) (Max) 400mA
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