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MJ11012G

MJ11012G

MJ11012G
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See specifications for product details.
AMI Semiconductor / ON SemiconductorAMI Semiconductor / ON Semiconductor
Part Number:
MJ11012G
Manufacturer/Brand:
AMI Semiconductor / ON Semiconductor
Product Description:
TRANS NPN DARL 60V 30A TO-3
Datasheets:
MJ11012G.pdf
RoHs Status:
Lead free / RoHS Compliant
Stock Condition:
43582 pcs stock
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Shipment Way:
DHL/Fedex/TNT/UPS/EMS

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In Stock 43582 pcs Reference Price(In US Dollars)

  • 1 pcs
    $1.53
  • 10 pcs
    $1.373
  • 100 pcs
    $1.125
  • 500 pcs
    $0.958
  • 1000 pcs
    $0.808
Target Price(USD):
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Total: $0.000
MJ11012G
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MJ11012G

Specifications of MJ11012G

AMI Semiconductor / ON SemiconductorAMI Semiconductor / ON Semiconductor
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Part Number MJ11012G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN DARL 60V 30A TO-3 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 43582 pcs stock Data sheet MJ11012G.pdf
Voltage - Collector Emitter Breakdown (Max) 60V Vce Saturation (Max) @ Ib, Ic 4V @ 300mA, 30A
Transistor Type NPN - Darlington Supplier Device Package TO-204 (TO-3)
Series - Power - Max 200W
Packaging Tray Package / Case TO-204AA, TO-3
Other Names MJ11012G-ND
MJ11012GOS
Operating Temperature -55°C ~ 200°C (TJ)
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 2 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 4MHz Detailed Description Bipolar (BJT) Transistor NPN - Darlington 60V 30A 4MHz 200W Through Hole TO-204 (TO-3)
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 20A, 5V Current - Collector Cutoff (Max) 1mA
Current - Collector (Ic) (Max) 30A  
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