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BDV65BG

BDV65BG

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AMI Semiconductor / ON Semiconductor

Part Number:: BDV65BG

Manufacturer/Brand:: AMI Semiconductor / ON Semiconductor

Product Description:: TRANS NPN DARL 100V 10A TO247

Datasheets:: BDV65BG.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 69929 pcs stock

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BDV65BG

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Specifications of BDV65BG

AMI Semiconductor / ON Semiconductor

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Part Number	BDV65BG	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN DARL 100V 10A TO247	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	69929 pcs stock	Data sheet	BDV65BG.pdf
Voltage - Collector Emitter Breakdown (Max)	100V	Vce Saturation (Max) @ Ib, Ic	2V @ 20mA, 5A
Transistor Type	NPN - Darlington	Supplier Device Package	TO-247
Series	-	Power - Max	125W
Packaging	Tube	Package / Case	TO-247-3
Other Names	BDV65BG-ND BDV65BGOS	Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	2 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	-	Detailed Description	Bipolar (BJT) Transistor NPN - Darlington 100V 10A 125W Through Hole TO-247
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 5A, 4V	Current - Collector Cutoff (Max)	1mA
Current - Collector (Ic) (Max)	10A

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Part Number	BDV65BG	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN DARL 100V 10A TO247	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	69929 pcs stock	Data sheet	BDV65BG.pdf
Voltage - Collector Emitter Breakdown (Max)	100V	Vce Saturation (Max) @ Ib, Ic	2V @ 20mA, 5A
Transistor Type	NPN - Darlington	Supplier Device Package	TO-247
Series	-	Power - Max	125W
Packaging	Tube	Package / Case	TO-247-3
Other Names	BDV65BG-ND BDV65BGOS	Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	2 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	-	Detailed Description	Bipolar (BJT) Transistor NPN - Darlington 100V 10A 125W Through Hole TO-247
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 5A, 4V	Current - Collector Cutoff (Max)	1mA
Current - Collector (Ic) (Max)	10A