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2SC4793,HFEF(M

2SC4793,HFEF(M

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Toshiba Semiconductor and Storage

Part Number:: 2SC4793,HFEF(M

Manufacturer/Brand:: Toshiba Semiconductor and Storage

Product Description:: TRANS NPN 1A 230V TO220-3

Datasheets:: 2SC4793,HFEF(M.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 4209 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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2SC4793,HFEF(M

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Specifications of 2SC4793,HFEF(M

Toshiba Semiconductor and Storage

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Part Number	2SC4793,HFEF(M	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS NPN 1A 230V TO220-3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4209 pcs stock	Data sheet	2SC4793,HFEF(M.pdf
Voltage - Collector Emitter Breakdown (Max)	230V	Vce Saturation (Max) @ Ib, Ic	1.5V @ 50mA, 500mA
Transistor Type	NPN	Supplier Device Package	TO-220NIS
Series	-	Power - Max	2W
Packaging	Bulk	Package / Case	TO-220-3 Full Pack
Other Names	2SC4793HFEF(M 2SC4793HFEFM	Operating Temperature	150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	100MHz
Detailed Description	Bipolar (BJT) Transistor NPN 230V 1A 100MHz 2W Through Hole TO-220NIS	DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 100mA, 5V
Current - Collector Cutoff (Max)	1µA (ICBO)	Current - Collector (Ic) (Max)	1A

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Part Number	2SC4793,HFEF(M	Manufacturer	Toshiba Semiconductor and Storage
Description	TRANS NPN 1A 230V TO220-3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4209 pcs stock	Data sheet	2SC4793,HFEF(M.pdf
Voltage - Collector Emitter Breakdown (Max)	230V	Vce Saturation (Max) @ Ib, Ic	1.5V @ 50mA, 500mA
Transistor Type	NPN	Supplier Device Package	TO-220NIS
Series	-	Power - Max	2W
Packaging	Bulk	Package / Case	TO-220-3 Full Pack
Other Names	2SC4793HFEF(M 2SC4793HFEFM	Operating Temperature	150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	100MHz
Detailed Description	Bipolar (BJT) Transistor NPN 230V 1A 100MHz 2W Through Hole TO-220NIS	DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 100mA, 5V
Current - Collector Cutoff (Max)	1µA (ICBO)	Current - Collector (Ic) (Max)	1A