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MJE180PWD

MJE180PWD

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AMI Semiconductor / ON Semiconductor

Specifications of MJE180PWD

AMI Semiconductor / ON Semiconductor

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Part Number	MJE180PWD	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN 40V 3A	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5089 pcs stock	Data sheet	MJE180PWD.pdf
Voltage - Collector Emitter Breakdown (Max)	40V	Vce Saturation (Max) @ Ib, Ic	1.7V @ 600mA, 3A
Transistor Type	NPN	Supplier Device Package	TO-126
Series	-	Power - Max	1.5W
Packaging	Bulk	Package / Case	TO-225AA, TO-126-3
Operating Temperature	150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	50MHz	Detailed Description	Bipolar (BJT) Transistor NPN 40V 3A 50MHz 1.5W Through Hole TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 100mA, 1V	Current - Collector Cutoff (Max)	100nA (ICBO)
Current - Collector (Ic) (Max)	3A	Base Part Number	MJE180

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• Part Number	MJE180PWD	Manufacturer	AMI Semiconductor / ON Semiconductor
  Description	TRANS NPN 40V 3A	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
  Quantity Available	5089 pcs stock	Data sheet	MJE180PWD.pdf
  Voltage - Collector Emitter Breakdown (Max)	40V	Vce Saturation (Max) @ Ib, Ic	1.7V @ 600mA, 3A
  Transistor Type	NPN	Supplier Device Package	TO-126
  Series	-	Power - Max	1.5W
  Packaging	Bulk	Package / Case	TO-225AA, TO-126-3
  Operating Temperature	150°C (TJ)	Mounting Type	Through Hole
  Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
  Frequency - Transition	50MHz	Detailed Description	Bipolar (BJT) Transistor NPN 40V 3A 50MHz 1.5W Through Hole TO-126
  DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 100mA, 1V	Current - Collector Cutoff (Max)	100nA (ICBO)
  Current - Collector (Ic) (Max)	3A	Base Part Number	MJE180

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