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MJD112-001

MJD112-001

MJD112-001
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See specifications for product details.
AMI Semiconductor / ON SemiconductorAMI Semiconductor / ON Semiconductor
Part Number:
MJD112-001
Manufacturer/Brand:
AMI Semiconductor / ON Semiconductor
Product Description:
TRANS NPN DARL 100V 2A IPAK
Datasheets:
MJD112-001.pdf
RoHs Status:
Contains lead / RoHS non-compliant
Stock Condition:
5005 pcs stock
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Shipment Way:
DHL/Fedex/TNT/UPS/EMS

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MJD112-001

Specifications of MJD112-001

AMI Semiconductor / ON SemiconductorAMI Semiconductor / ON Semiconductor
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Part Number MJD112-001 Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN DARL 100V 2A IPAK Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Quantity Available 5005 pcs stock Data sheet MJD112-001.pdf
Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 4A
Transistor Type NPN - Darlington Supplier Device Package I-PAK
Series - Power - Max 1.75W
Packaging Tube Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Other Names MJD112-001OS Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant Frequency - Transition 25MHz
Detailed Description Bipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 1.75W Through Hole I-PAK DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 2A, 3V
Current - Collector Cutoff (Max) 20µA Current - Collector (Ic) (Max) 2A
Base Part Number MJD112  
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