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2N6027RL1

2N6027RL1

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AMI Semiconductor / ON Semiconductor

Specifications of 2N6027RL1

AMI Semiconductor / ON Semiconductor

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Part Number	2N6027RL1	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	THYRISTOR PROG UNIJUNCT 40V TO92	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Quantity Available	4433 pcs stock	Data sheet	2N6027RL1.pdf
Voltage - Output	11V	Voltage - Offset (Vt)	1.6V
Voltage	40V	Series	-
Power Dissipation (Max)	300mW	Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Detailed Description	Programmable Unijunction Transistor (UJT) 40V 300mW TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Current - Valley (Iv)	50µA
Current - Peak	2µA	Current - Gate to Anode Leakage (Igao)	10nA

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• Part Number	2N6027RL1	Manufacturer	AMI Semiconductor / ON Semiconductor
  Description	THYRISTOR PROG UNIJUNCT 40V TO92	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
  Quantity Available	4433 pcs stock	Data sheet	2N6027RL1.pdf
  Voltage - Output	11V	Voltage - Offset (Vt)	1.6V
  Voltage	40V	Series	-
  Power Dissipation (Max)	300mW	Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
  Detailed Description	Programmable Unijunction Transistor (UJT) 40V 300mW TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)	Current - Valley (Iv)	50µA
  Current - Peak	2µA	Current - Gate to Anode Leakage (Igao)	10nA

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