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BC372

BC372

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AMI Semiconductor / ON Semiconductor

Part Number:: BC372

Manufacturer/Brand:: AMI Semiconductor / ON Semiconductor

Product Description:: TRANS NPN DARL 100V 1A TO-92

Datasheets:: BC372.pdf

RoHs Status:: Contains lead / RoHS non-compliant

Stock Condition:: 5809 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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Specifications of BC372

AMI Semiconductor / ON Semiconductor

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Part Number	BC372	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN DARL 100V 1A TO-92	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Quantity Available	5809 pcs stock	Data sheet	BC372.pdf
Voltage - Collector Emitter Breakdown (Max)	100V	Vce Saturation (Max) @ Ib, Ic	1.1V @ 250µA, 250mA
Transistor Type	NPN - Darlington	Supplier Device Package	TO-92-3
Series	-	Power - Max	625mW
Packaging	Bulk	Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Frequency - Transition	200MHz	Detailed Description	Bipolar (BJT) Transistor NPN - Darlington 100V 1A 200MHz 625mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce	10000 @ 100mA, 5V	Current - Collector Cutoff (Max)	100nA (ICBO)
Current - Collector (Ic) (Max)	1A

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Part Number	BC372	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN DARL 100V 1A TO-92	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Quantity Available	5809 pcs stock	Data sheet	BC372.pdf
Voltage - Collector Emitter Breakdown (Max)	100V	Vce Saturation (Max) @ Ib, Ic	1.1V @ 250µA, 250mA
Transistor Type	NPN - Darlington	Supplier Device Package	TO-92-3
Series	-	Power - Max	625mW
Packaging	Bulk	Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Frequency - Transition	200MHz	Detailed Description	Bipolar (BJT) Transistor NPN - Darlington 100V 1A 200MHz 625mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce	10000 @ 100mA, 5V	Current - Collector Cutoff (Max)	100nA (ICBO)
Current - Collector (Ic) (Max)	1A