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DRA2123Y0L

DRA2123Y0L

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Panasonic

Part Number:: DRA2123Y0L

Manufacturer/Brand:: Panasonic

Product Description:: TRANS PREBIAS PNP 200MW MINI3

Datasheets:: DRA2123Y0L.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 1412060 pcs stock

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Specifications of DRA2123Y0L

Panasonic

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Part Number	DRA2123Y0L	Manufacturer	Panasonic
Description	TRANS PREBIAS PNP 200MW MINI3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	1412060 pcs stock	Data sheet	DRA2123Y0L.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	250mV @ 500µA, 10mA
Transistor Type	PNP - Pre-Biased	Supplier Device Package	Mini3-G3-B
Series	-	Resistor - Emitter Base (R2)	10 kOhms
Resistor - Base (R1)	2.2 kOhms	Power - Max	200mW
Packaging	Tape & Reel (TR)	Package / Case	TO-236-3, SC-59, SOT-23-3
Other Names	DRA2123Y0L-ND DRA2123Y0LTR	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Manufacturer Standard Lead Time	11 Weeks
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Detailed Description	Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200mW Surface Mount Mini3-G3-B
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 5mA, 10V	Current - Collector Cutoff (Max)	500nA
Current - Collector (Ic) (Max)	100mA	Base Part Number	DRA2123

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Part Number	DRA2123Y0L	Manufacturer	Panasonic
Description	TRANS PREBIAS PNP 200MW MINI3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	1412060 pcs stock	Data sheet	DRA2123Y0L.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	250mV @ 500µA, 10mA
Transistor Type	PNP - Pre-Biased	Supplier Device Package	Mini3-G3-B
Series	-	Resistor - Emitter Base (R2)	10 kOhms
Resistor - Base (R1)	2.2 kOhms	Power - Max	200mW
Packaging	Tape & Reel (TR)	Package / Case	TO-236-3, SC-59, SOT-23-3
Other Names	DRA2123Y0L-ND DRA2123Y0LTR	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Manufacturer Standard Lead Time	11 Weeks
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Detailed Description	Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200mW Surface Mount Mini3-G3-B
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 5mA, 10V	Current - Collector Cutoff (Max)	500nA
Current - Collector (Ic) (Max)	100mA	Base Part Number	DRA2123