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DTB113ESTP

DTB113ESTP

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LAPIS Semiconductor

Part Number:: DTB113ESTP

Manufacturer/Brand:: LAPIS Semiconductor

Product Description:: TRANS PREBIAS PNP 300MW SPT

Datasheets:: DTB113ESTP.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 5493 pcs stock

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Specifications of DTB113ESTP

LAPIS Semiconductor

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Part Number	DTB113ESTP	Manufacturer	LAPIS Semiconductor
Description	TRANS PREBIAS PNP 300MW SPT	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5493 pcs stock	Data sheet	DTB113ESTP.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	300mV @ 2.5mA, 50mA
Transistor Type	PNP - Pre-Biased	Supplier Device Package	SPT
Series	-	Resistor - Emitter Base (R2)	1 kOhms
Resistor - Base (R1)	1 kOhms	Power - Max	300mW
Packaging	Tape & Box (TB)	Package / Case	SC-72 Formed Leads
Other Names	DTB113ESTP-ND DTB113ESTPTB	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	200MHz	Detailed Description	Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 200MHz 300mW Through Hole SPT
DC Current Gain (hFE) (Min) @ Ic, Vce	33 @ 50mA, 5V	Current - Collector Cutoff (Max)	500nA
Current - Collector (Ic) (Max)	500mA	Base Part Number	DTB113

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Part Number	DTB113ESTP	Manufacturer	LAPIS Semiconductor
Description	TRANS PREBIAS PNP 300MW SPT	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5493 pcs stock	Data sheet	DTB113ESTP.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	300mV @ 2.5mA, 50mA
Transistor Type	PNP - Pre-Biased	Supplier Device Package	SPT
Series	-	Resistor - Emitter Base (R2)	1 kOhms
Resistor - Base (R1)	1 kOhms	Power - Max	300mW
Packaging	Tape & Box (TB)	Package / Case	SC-72 Formed Leads
Other Names	DTB113ESTP-ND DTB113ESTPTB	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	200MHz	Detailed Description	Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 200MHz 300mW Through Hole SPT
DC Current Gain (hFE) (Min) @ Ic, Vce	33 @ 50mA, 5V	Current - Collector Cutoff (Max)	500nA
Current - Collector (Ic) (Max)	500mA	Base Part Number	DTB113