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DTC014TMT2L

DTC014TMT2L

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LAPIS Semiconductor

Part Number:: DTC014TMT2L

Manufacturer/Brand:: LAPIS Semiconductor

Product Description:: TRANS PREBIAS NPN 50V VMT3

Datasheets:: 1.DTC014TMT2L.pdf 2.DTC014TMT2L.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 3144387 pcs stock

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Specifications of DTC014TMT2L

LAPIS Semiconductor

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Part Number	DTC014TMT2L	Manufacturer	LAPIS Semiconductor
Description	TRANS PREBIAS NPN 50V VMT3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	3144387 pcs stock	Data sheet	1.DTC014TMT2L.pdf 2.DTC014TMT2L.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	150mV @ 500µA, 5mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	VMT3
Series	-	Resistor - Base (R1)	10 kOhms
Power - Max	150mW	Packaging	Tape & Reel (TR)
Package / Case	SOT-723	Other Names	DTC014TMT2LTR
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	10 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	250MHz	Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount VMT3
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 5mA, 10V	Current - Collector Cutoff (Max)	500nA (ICBO)
Current - Collector (Ic) (Max)	100mA

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Part Number	DTC014TMT2L	Manufacturer	LAPIS Semiconductor
Description	TRANS PREBIAS NPN 50V VMT3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	3144387 pcs stock	Data sheet	1.DTC014TMT2L.pdf 2.DTC014TMT2L.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	150mV @ 500µA, 5mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	VMT3
Series	-	Resistor - Base (R1)	10 kOhms
Power - Max	150mW	Packaging	Tape & Reel (TR)
Package / Case	SOT-723	Other Names	DTC014TMT2LTR
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	10 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	250MHz	Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount VMT3
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 5mA, 10V	Current - Collector Cutoff (Max)	500nA (ICBO)
Current - Collector (Ic) (Max)	100mA