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DTD114ESTP

DTD114ESTP

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LAPIS Semiconductor

Part Number:: DTD114ESTP

Manufacturer/Brand:: LAPIS Semiconductor

Product Description:: TRANS PREBIAS NPN 300MW SPT

Datasheets:: DTD114ESTP.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 5428 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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DTD114ESTP

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Specifications of DTD114ESTP

LAPIS Semiconductor

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Part Number	DTD114ESTP	Manufacturer	LAPIS Semiconductor
Description	TRANS PREBIAS NPN 300MW SPT	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5428 pcs stock	Data sheet	DTD114ESTP.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	300mV @ 2.5mA, 50mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	SPT
Series	-	Resistor - Emitter Base (R2)	10 kOhms
Resistor - Base (R1)	10 kOhms	Power - Max	300mW
Packaging	Tape & Box (TB)	Package / Case	SC-72 Formed Leads
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	200MHz
Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 200MHz 300mW Through Hole SPT	DC Current Gain (hFE) (Min) @ Ic, Vce	56 @ 50mA, 5V
Current - Collector Cutoff (Max)	500nA	Current - Collector (Ic) (Max)	500mA
Base Part Number	DTD114

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Part Number	DTD114ESTP	Manufacturer	LAPIS Semiconductor
Description	TRANS PREBIAS NPN 300MW SPT	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5428 pcs stock	Data sheet	DTD114ESTP.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	300mV @ 2.5mA, 50mA
Transistor Type	NPN - Pre-Biased	Supplier Device Package	SPT
Series	-	Resistor - Emitter Base (R2)	10 kOhms
Resistor - Base (R1)	10 kOhms	Power - Max	300mW
Packaging	Tape & Box (TB)	Package / Case	SC-72 Formed Leads
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	200MHz
Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 200MHz 300mW Through Hole SPT	DC Current Gain (hFE) (Min) @ Ic, Vce	56 @ 50mA, 5V
Current - Collector Cutoff (Max)	500nA	Current - Collector (Ic) (Max)	500mA
Base Part Number	DTD114