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EML20T2R

EML20T2R

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LAPIS Semiconductor

Part Number:: EML20T2R

Manufacturer/Brand:: LAPIS Semiconductor

Product Description:: TRANS PREBIAS NPN 0.15W

Datasheets:: EML20T2R.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 607473 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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In Stock 607473 pcs Reference Price(In US Dollars)

8000 pcs
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EML20T2R

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Specifications of EML20T2R

LAPIS Semiconductor

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Part Number	EML20T2R	Manufacturer	LAPIS Semiconductor
Description	TRANS PREBIAS NPN 0.15W	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	607473 pcs stock	Data sheet	EML20T2R.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Transistor Type	NPN - Pre-Biased + Diode	Supplier Device Package	EMT6
Series	-	Resistor - Emitter Base (R2)	47 kOhms
Resistor - Base (R1)	2.2 kOhms	Power - Max	150mW
Packaging	Tape & Reel (TR)	Package / Case	SOT-563, SOT-666
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	250MHz
Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased + Diode 50V 100mA 250MHz 150mW Surface Mount EMT6	DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Current - Collector Cutoff (Max)	500nA	Current - Collector (Ic) (Max)	100mA

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Part Number	EML20T2R	Manufacturer	LAPIS Semiconductor
Description	TRANS PREBIAS NPN 0.15W	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	607473 pcs stock	Data sheet	EML20T2R.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Transistor Type	NPN - Pre-Biased + Diode	Supplier Device Package	EMT6
Series	-	Resistor - Emitter Base (R2)	47 kOhms
Resistor - Base (R1)	2.2 kOhms	Power - Max	150mW
Packaging	Tape & Reel (TR)	Package / Case	SOT-563, SOT-666
Mounting Type	Surface Mount	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	250MHz
Detailed Description	Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased + Diode 50V 100mA 250MHz 150mW Surface Mount EMT6	DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Current - Collector Cutoff (Max)	500nA	Current - Collector (Ic) (Max)	100mA