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FJN4314RBU

FJN4314RBU

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AMI Semiconductor / ON Semiconductor

Part Number:: FJN4314RBU

Manufacturer/Brand:: AMI Semiconductor / ON Semiconductor

Product Description:: TRANS PREBIAS PNP 300MW TO92-3

Datasheets:

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 5403 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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Specifications of FJN4314RBU

AMI Semiconductor / ON Semiconductor

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Part Number	FJN4314RBU	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS PREBIAS PNP 300MW TO92-3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5403 pcs stock	Data sheet
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 10mA
Transistor Type	PNP - Pre-Biased	Supplier Device Package	TO-92-3
Series	-	Resistor - Emitter Base (R2)	47 kOhms
Resistor - Base (R1)	4.7 kOhms	Power - Max	300mW
Packaging	Bulk	Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	200MHz
Detailed Description	Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 300mW Through Hole TO-92-3	DC Current Gain (hFE) (Min) @ Ic, Vce	68 @ 5mA, 5V
Current - Collector Cutoff (Max)	100nA (ICBO)	Current - Collector (Ic) (Max)	100mA

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Part Number	FJN4314RBU	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS PREBIAS PNP 300MW TO92-3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	5403 pcs stock	Data sheet
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 10mA
Transistor Type	PNP - Pre-Biased	Supplier Device Package	TO-92-3
Series	-	Resistor - Emitter Base (R2)	47 kOhms
Resistor - Base (R1)	4.7 kOhms	Power - Max	300mW
Packaging	Bulk	Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	200MHz
Detailed Description	Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 300mW Through Hole TO-92-3	DC Current Gain (hFE) (Min) @ Ic, Vce	68 @ 5mA, 5V
Current - Collector Cutoff (Max)	100nA (ICBO)	Current - Collector (Ic) (Max)	100mA