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FJP2160DTU

FJP2160DTU

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AMI Semiconductor / ON Semiconductor

Part Number:: FJP2160DTU

Manufacturer/Brand:: AMI Semiconductor / ON Semiconductor

Product Description:: TRANS NPN 800V 2A TO-220

Datasheets:: FJP2160DTU.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 89792 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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In Stock 89792 pcs Reference Price(In US Dollars)

1 pcs
$0.563
10 pcs
$0.504
100 pcs
$0.393
500 pcs
$0.325
1000 pcs
$0.256

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FJP2160DTU

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Specifications of FJP2160DTU

AMI Semiconductor / ON Semiconductor

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Part Number	FJP2160DTU	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN 800V 2A TO-220	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	89792 pcs stock	Data sheet	FJP2160DTU.pdf
Voltage - Collector Emitter Breakdown (Max)	800V	Vce Saturation (Max) @ Ib, Ic	750mV @ 330mA, 1A
Transistor Type	NPN	Supplier Device Package	TO-220-3
Series	ESBC™	Power - Max	100W
Packaging	Tube	Package / Case	TO-220-3
Operating Temperature	-55°C ~ 125°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	5MHz	Detailed Description	Bipolar (BJT) Transistor NPN 800V 2A 5MHz 100W Through Hole TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 400mA, 3V	Current - Collector Cutoff (Max)	100µA
Current - Collector (Ic) (Max)	2A

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Part Number	FJP2160DTU	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN 800V 2A TO-220	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	89792 pcs stock	Data sheet	FJP2160DTU.pdf
Voltage - Collector Emitter Breakdown (Max)	800V	Vce Saturation (Max) @ Ib, Ic	750mV @ 330mA, 1A
Transistor Type	NPN	Supplier Device Package	TO-220-3
Series	ESBC™	Power - Max	100W
Packaging	Tube	Package / Case	TO-220-3
Operating Temperature	-55°C ~ 125°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	5MHz	Detailed Description	Bipolar (BJT) Transistor NPN 800V 2A 5MHz 100W Through Hole TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 400mA, 3V	Current - Collector Cutoff (Max)	100µA
Current - Collector (Ic) (Max)	2A