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JAN2N2219AL

JAN2N2219AL

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Microsemi

Part Number:: JAN2N2219AL

Manufacturer/Brand:: Microsemi

Product Description:: TRANS NPN 50V 0.8A

Datasheets:: JAN2N2219AL.pdf

RoHs Status:: Contains lead / RoHS non-compliant

Stock Condition:: 8682 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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In Stock 8682 pcs Reference Price(In US Dollars)

100 pcs
$4.413

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JAN2N2219AL

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Specifications of JAN2N2219AL

Microsemi

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Part Number	JAN2N2219AL	Manufacturer	Microsemi
Description	TRANS NPN 50V 0.8A	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Quantity Available	8682 pcs stock	Data sheet	JAN2N2219AL.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	1V @ 50mA, 500mA
Transistor Type	NPN	Supplier Device Package	TO-5
Series	Military, MIL-PRF-19500/251	Power - Max	800mW
Packaging	Bulk	Package / Case	TO-205AA, TO-5-3 Metal Can
Other Names	1086-2322 1086-2322-MIL	Operating Temperature	-55°C ~ 200°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	23 Weeks	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Frequency - Transition	-	Detailed Description	Bipolar (BJT) Transistor NPN 50V 800mA 800mW Through Hole TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V	Current - Collector Cutoff (Max)	10nA
Current - Collector (Ic) (Max)	800mA

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Part Number	JAN2N2219AL	Manufacturer	Microsemi
Description	TRANS NPN 50V 0.8A	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Quantity Available	8682 pcs stock	Data sheet	JAN2N2219AL.pdf
Voltage - Collector Emitter Breakdown (Max)	50V	Vce Saturation (Max) @ Ib, Ic	1V @ 50mA, 500mA
Transistor Type	NPN	Supplier Device Package	TO-5
Series	Military, MIL-PRF-19500/251	Power - Max	800mW
Packaging	Bulk	Package / Case	TO-205AA, TO-5-3 Metal Can
Other Names	1086-2322 1086-2322-MIL	Operating Temperature	-55°C ~ 200°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	23 Weeks	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Frequency - Transition	-	Detailed Description	Bipolar (BJT) Transistor NPN 50V 800mA 800mW Through Hole TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V	Current - Collector Cutoff (Max)	10nA
Current - Collector (Ic) (Max)	800mA