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JAN2N3439

JAN2N3439

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Microsemi

Part Number:: JAN2N3439

Manufacturer/Brand:: Microsemi

Product Description:: TRANS NPN 350V 1A

Datasheets:: JAN2N3439.pdf

RoHs Status:: Contains lead / RoHS non-compliant

Stock Condition:: 4197 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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In Stock 4197 pcs Reference Price(In US Dollars)

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JAN2N3439

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Specifications of JAN2N3439

Microsemi

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Part Number	JAN2N3439	Manufacturer	Microsemi
Description	TRANS NPN 350V 1A	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Quantity Available	4197 pcs stock	Data sheet	JAN2N3439.pdf
Voltage - Collector Emitter Breakdown (Max)	350V	Vce Saturation (Max) @ Ib, Ic	500mV @ 4mA, 50mA
Transistor Type	NPN	Supplier Device Package	TO-39 (TO-205AD)
Series	Military, MIL-PRF-19500/368	Power - Max	800mW
Packaging	Bulk	Package / Case	TO-205AD, TO-39-3 Metal Can
Other Names	1086-2343 1086-2343-MIL	Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	22 Weeks	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Frequency - Transition	-	Detailed Description	Bipolar (BJT) Transistor NPN 350V 1A 800mW Through Hole TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 20mA, 10V	Current - Collector Cutoff (Max)	2µA
Current - Collector (Ic) (Max)	1A

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Part Number	JAN2N3439	Manufacturer	Microsemi
Description	TRANS NPN 350V 1A	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Quantity Available	4197 pcs stock	Data sheet	JAN2N3439.pdf
Voltage - Collector Emitter Breakdown (Max)	350V	Vce Saturation (Max) @ Ib, Ic	500mV @ 4mA, 50mA
Transistor Type	NPN	Supplier Device Package	TO-39 (TO-205AD)
Series	Military, MIL-PRF-19500/368	Power - Max	800mW
Packaging	Bulk	Package / Case	TO-205AD, TO-39-3 Metal Can
Other Names	1086-2343 1086-2343-MIL	Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	22 Weeks	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Frequency - Transition	-	Detailed Description	Bipolar (BJT) Transistor NPN 350V 1A 800mW Through Hole TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 20mA, 10V	Current - Collector Cutoff (Max)	2µA
Current - Collector (Ic) (Max)	1A