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JANTX2N3501L

JANTX2N3501L

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Microsemi

Part Number:: JANTX2N3501L

Manufacturer/Brand:: Microsemi

Product Description:: TRANS NPN 150V 0.3A

Datasheets:: JANTX2N3501L.pdf

RoHs Status:: Contains lead / RoHS non-compliant

Stock Condition:: 9763 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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In Stock 9763 pcs Reference Price(In US Dollars)

100 pcs
$4.04

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Specifications of JANTX2N3501L

Microsemi

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Part Number	JANTX2N3501L	Manufacturer	Microsemi
Description	TRANS NPN 150V 0.3A	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Quantity Available	9763 pcs stock	Data sheet	JANTX2N3501L.pdf
Voltage - Collector Emitter Breakdown (Max)	150V	Vce Saturation (Max) @ Ib, Ic	400mV @ 15mA, 150mA
Transistor Type	NPN	Supplier Device Package	TO-5
Series	Military, MIL-PRF-19500/366	Power - Max	1W
Packaging	Bulk	Package / Case	TO-5
Other Names	1086-2701 1086-2701-MIL	Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	23 Weeks	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Frequency - Transition	-	Detailed Description	Bipolar (BJT) Transistor NPN 150V 300mA 1W Through Hole TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V	Current - Collector Cutoff (Max)	10µA (ICBO)
Current - Collector (Ic) (Max)	300mA

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Part Number	JANTX2N3501L	Manufacturer	Microsemi
Description	TRANS NPN 150V 0.3A	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Quantity Available	9763 pcs stock	Data sheet	JANTX2N3501L.pdf
Voltage - Collector Emitter Breakdown (Max)	150V	Vce Saturation (Max) @ Ib, Ic	400mV @ 15mA, 150mA
Transistor Type	NPN	Supplier Device Package	TO-5
Series	Military, MIL-PRF-19500/366	Power - Max	1W
Packaging	Bulk	Package / Case	TO-5
Other Names	1086-2701 1086-2701-MIL	Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	23 Weeks	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Frequency - Transition	-	Detailed Description	Bipolar (BJT) Transistor NPN 150V 300mA 1W Through Hole TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA, 10V	Current - Collector Cutoff (Max)	10µA (ICBO)
Current - Collector (Ic) (Max)	300mA