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KSC2316OTA

KSC2316OTA

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Specifications

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AMI Semiconductor / ON Semiconductor

Part Number:: KSC2316OTA

Manufacturer/Brand:: AMI Semiconductor / ON Semiconductor

Product Description:: TRANS NPN 120V 0.8A TO-92L

Datasheets:: KSC2316OTA.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 4276 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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KSC2316OTA

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Specifications of KSC2316OTA

AMI Semiconductor / ON Semiconductor

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Part Number	KSC2316OTA	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN 120V 0.8A TO-92L	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4276 pcs stock	Data sheet	KSC2316OTA.pdf
Voltage - Collector Emitter Breakdown (Max)	120V	Vce Saturation (Max) @ Ib, Ic	1V @ 50mA, 500mA
Transistor Type	NPN	Supplier Device Package	TO-92-3
Series	-	Power - Max	900mW
Packaging	Tape & Box (TB)	Package / Case	TO-226-3, TO-92-3 Long Body (Formed Leads)
Operating Temperature	150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	120MHz	Detailed Description	Bipolar (BJT) Transistor NPN 120V 800mA 120MHz 900mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 100mA, 5V	Current - Collector Cutoff (Max)	100nA (ICBO)
Current - Collector (Ic) (Max)	800mA	Base Part Number	KSC2316

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Part Number	KSC2316OTA	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN 120V 0.8A TO-92L	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	4276 pcs stock	Data sheet	KSC2316OTA.pdf
Voltage - Collector Emitter Breakdown (Max)	120V	Vce Saturation (Max) @ Ib, Ic	1V @ 50mA, 500mA
Transistor Type	NPN	Supplier Device Package	TO-92-3
Series	-	Power - Max	900mW
Packaging	Tape & Box (TB)	Package / Case	TO-226-3, TO-92-3 Long Body (Formed Leads)
Operating Temperature	150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	120MHz	Detailed Description	Bipolar (BJT) Transistor NPN 120V 800mA 120MHz 900mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 100mA, 5V	Current - Collector Cutoff (Max)	100nA (ICBO)
Current - Collector (Ic) (Max)	800mA	Base Part Number	KSC2316