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MJ11016

MJ11016

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AMI Semiconductor / ON Semiconductor

Part Number:: MJ11016

Manufacturer/Brand:: AMI Semiconductor / ON Semiconductor

Product Description:: TRANS NPN DARL 120V 30A TO3

Datasheets:: MJ11016.pdf

RoHs Status:: Contains lead / RoHS non-compliant

Stock Condition:: 4607 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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Specifications of MJ11016

AMI Semiconductor / ON Semiconductor

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Part Number	MJ11016	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN DARL 120V 30A TO3	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Quantity Available	4607 pcs stock	Data sheet	MJ11016.pdf
Voltage - Collector Emitter Breakdown (Max)	120V	Vce Saturation (Max) @ Ib, Ic	4V @ 300mA, 30A
Transistor Type	NPN - Darlington	Supplier Device Package	TO-204 (TO-3)
Series	-	Power - Max	200W
Packaging	Tray	Package / Case	TO-204AA, TO-3
Other Names	MJ11016OS	Operating Temperature	-55°C ~ 200°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant	Frequency - Transition	4MHz
Detailed Description	Bipolar (BJT) Transistor NPN - Darlington 120V 30A 4MHz 200W Through Hole TO-204 (TO-3)	DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 20A, 5V
Current - Collector Cutoff (Max)	1mA	Current - Collector (Ic) (Max)	30A

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Part Number	MJ11016	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN DARL 120V 30A TO3	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Quantity Available	4607 pcs stock	Data sheet	MJ11016.pdf
Voltage - Collector Emitter Breakdown (Max)	120V	Vce Saturation (Max) @ Ib, Ic	4V @ 300mA, 30A
Transistor Type	NPN - Darlington	Supplier Device Package	TO-204 (TO-3)
Series	-	Power - Max	200W
Packaging	Tray	Package / Case	TO-204AA, TO-3
Other Names	MJ11016OS	Operating Temperature	-55°C ~ 200°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant	Frequency - Transition	4MHz
Detailed Description	Bipolar (BJT) Transistor NPN - Darlington 120V 30A 4MHz 200W Through Hole TO-204 (TO-3)	DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 20A, 5V
Current - Collector Cutoff (Max)	1mA	Current - Collector (Ic) (Max)	30A