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MJ14002G

MJ14002G

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AMI Semiconductor / ON Semiconductor

Part Number:: MJ14002G

Manufacturer/Brand:: AMI Semiconductor / ON Semiconductor

Product Description:: TRANS NPN 80V 60A TO3

Datasheets:: MJ14002G.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 8900 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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In Stock 8900 pcs Reference Price(In US Dollars)

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$5.124
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$4.71
100 pcs
$3.978
500 pcs
$3.539

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MJ14002G

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Specifications of MJ14002G

AMI Semiconductor / ON Semiconductor

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Part Number	MJ14002G	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN 80V 60A TO3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	8900 pcs stock	Data sheet	MJ14002G.pdf
Voltage - Collector Emitter Breakdown (Max)	80V	Vce Saturation (Max) @ Ib, Ic	3V @ 12A, 60A
Transistor Type	NPN	Supplier Device Package	TO-3
Series	-	Power - Max	300W
Packaging	Tray	Package / Case	TO-204AE
Other Names	MJ14002GOS	Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	5 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	-	Detailed Description	Bipolar (BJT) Transistor NPN 80V 60A 300W Through Hole TO-3
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 50A, 3V	Current - Collector Cutoff (Max)	1mA
Current - Collector (Ic) (Max)	60A

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Part Number	MJ14002G	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN 80V 60A TO3	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	8900 pcs stock	Data sheet	MJ14002G.pdf
Voltage - Collector Emitter Breakdown (Max)	80V	Vce Saturation (Max) @ Ib, Ic	3V @ 12A, 60A
Transistor Type	NPN	Supplier Device Package	TO-3
Series	-	Power - Max	300W
Packaging	Tray	Package / Case	TO-204AE
Other Names	MJ14002GOS	Operating Temperature	-65°C ~ 200°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	5 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	-	Detailed Description	Bipolar (BJT) Transistor NPN 80V 60A 300W Through Hole TO-3
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 50A, 3V	Current - Collector Cutoff (Max)	1mA
Current - Collector (Ic) (Max)	60A