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MJD112-1G

MJD112-1G

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AMI Semiconductor / ON Semiconductor

Part Number:: MJD112-1G

Manufacturer/Brand:: AMI Semiconductor / ON Semiconductor

Product Description:: TRANS NPN DARL 100V 2A IPAK

Datasheets:: MJD112-1G.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 239501 pcs stock

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Specifications of MJD112-1G

AMI Semiconductor / ON Semiconductor

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Part Number	MJD112-1G	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN DARL 100V 2A IPAK	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	239501 pcs stock	Data sheet	MJD112-1G.pdf
Voltage - Collector Emitter Breakdown (Max)	100V	Vce Saturation (Max) @ Ib, Ic	3V @ 40mA, 4A
Transistor Type	NPN - Darlington	Supplier Device Package	I-PAK
Series	-	Power - Max	1.75W
Packaging	Tube	Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Other Names	MJD112-1GOS MJD1121G	Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	9 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	25MHz	Detailed Description	Bipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 1.75W Through Hole I-PAK
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 2A, 3V	Current - Collector Cutoff (Max)	20µA
Current - Collector (Ic) (Max)	2A	Base Part Number	MJD112

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Part Number	MJD112-1G	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN DARL 100V 2A IPAK	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	239501 pcs stock	Data sheet	MJD112-1G.pdf
Voltage - Collector Emitter Breakdown (Max)	100V	Vce Saturation (Max) @ Ib, Ic	3V @ 40mA, 4A
Transistor Type	NPN - Darlington	Supplier Device Package	I-PAK
Series	-	Power - Max	1.75W
Packaging	Tube	Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Other Names	MJD112-1GOS MJD1121G	Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	9 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	25MHz	Detailed Description	Bipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 1.75W Through Hole I-PAK
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 2A, 3V	Current - Collector Cutoff (Max)	20µA
Current - Collector (Ic) (Max)	2A	Base Part Number	MJD112