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MJD112RL

MJD112RL

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AMI Semiconductor / ON Semiconductor

Part Number:: MJD112RL

Manufacturer/Brand:: AMI Semiconductor / ON Semiconductor

Product Description:: TRANS NPN DARL 100V 2A DPAK

Datasheets:: MJD112RL.pdf

RoHs Status:: Contains lead / RoHS non-compliant

Stock Condition:: 3997 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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Specifications of MJD112RL

AMI Semiconductor / ON Semiconductor

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Part Number	MJD112RL	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN DARL 100V 2A DPAK	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Quantity Available	3997 pcs stock	Data sheet	MJD112RL.pdf
Voltage - Collector Emitter Breakdown (Max)	100V	Vce Saturation (Max) @ Ib, Ic	3V @ 40mA, 4A
Transistor Type	NPN - Darlington	Supplier Device Package	DPAK
Series	-	Power - Max	1.75W
Packaging	Tape & Reel (TR)	Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature	-65°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Frequency - Transition	25MHz	Detailed Description	Bipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 1.75W Surface Mount DPAK
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 2A, 3V	Current - Collector Cutoff (Max)	20µA
Current - Collector (Ic) (Max)	2A	Base Part Number	MJD112

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Part Number	MJD112RL	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN DARL 100V 2A DPAK	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Quantity Available	3997 pcs stock	Data sheet	MJD112RL.pdf
Voltage - Collector Emitter Breakdown (Max)	100V	Vce Saturation (Max) @ Ib, Ic	3V @ 40mA, 4A
Transistor Type	NPN - Darlington	Supplier Device Package	DPAK
Series	-	Power - Max	1.75W
Packaging	Tape & Reel (TR)	Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature	-65°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Lead Free Status / RoHS Status	Contains lead / RoHS non-compliant
Frequency - Transition	25MHz	Detailed Description	Bipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 1.75W Surface Mount DPAK
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 2A, 3V	Current - Collector Cutoff (Max)	20µA
Current - Collector (Ic) (Max)	2A	Base Part Number	MJD112