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MJD253-1G

MJD253-1G

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AMI Semiconductor / ON Semiconductor

Part Number:: MJD253-1G

Manufacturer/Brand:: AMI Semiconductor / ON Semiconductor

Product Description:: TRANS PNP 100V 4A IPAK

Datasheets:: MJD253-1G.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 179899 pcs stock

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Specifications of MJD253-1G

AMI Semiconductor / ON Semiconductor

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Part Number	MJD253-1G	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS PNP 100V 4A IPAK	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	179899 pcs stock	Data sheet	MJD253-1G.pdf
Voltage - Collector Emitter Breakdown (Max)	100V	Vce Saturation (Max) @ Ib, Ic	600mV @ 100mA, 1A
Transistor Type	PNP	Supplier Device Package	I-PAK
Series	-	Power - Max	1.4W
Packaging	Tube	Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Other Names	MJD253-1G-ND MJD253-1GOS MJD2531G	Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	4 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	40MHz	Detailed Description	Bipolar (BJT) Transistor PNP 100V 4A 40MHz 1.4W Through Hole I-PAK
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 200mA, 1V	Current - Collector Cutoff (Max)	100nA (ICBO)
Current - Collector (Ic) (Max)	4A	Base Part Number	MJD253

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Part Number	MJD253-1G	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS PNP 100V 4A IPAK	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	179899 pcs stock	Data sheet	MJD253-1G.pdf
Voltage - Collector Emitter Breakdown (Max)	100V	Vce Saturation (Max) @ Ib, Ic	600mV @ 100mA, 1A
Transistor Type	PNP	Supplier Device Package	I-PAK
Series	-	Power - Max	1.4W
Packaging	Tube	Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Other Names	MJD253-1G-ND MJD253-1GOS MJD2531G	Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	4 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	40MHz	Detailed Description	Bipolar (BJT) Transistor PNP 100V 4A 40MHz 1.4W Through Hole I-PAK
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 200mA, 1V	Current - Collector Cutoff (Max)	100nA (ICBO)
Current - Collector (Ic) (Max)	4A	Base Part Number	MJD253