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MJE18008G

MJE18008G

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AMI Semiconductor / ON Semiconductor

Part Number:: MJE18008G

Manufacturer/Brand:: AMI Semiconductor / ON Semiconductor

Product Description:: TRANS NPN 450V 8A TO220AB

Datasheets:: MJE18008G.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 87215 pcs stock

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MJE18008G

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Specifications of MJE18008G

AMI Semiconductor / ON Semiconductor

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Part Number	MJE18008G	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN 450V 8A TO220AB	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	87215 pcs stock	Data sheet	MJE18008G.pdf
Voltage - Collector Emitter Breakdown (Max)	450V	Vce Saturation (Max) @ Ib, Ic	700mV @ 900mA, 4.5V
Transistor Type	NPN	Supplier Device Package	TO-220AB
Series	SWITCHMODE™	Power - Max	125W
Packaging	Tube	Package / Case	TO-220-3
Other Names	MJE18008GOS	Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	14 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	13MHz	Detailed Description	Bipolar (BJT) Transistor NPN 450V 8A 13MHz 125W Through Hole TO-220AB
DC Current Gain (hFE) (Min) @ Ic, Vce	14 @ 1A, 5V	Current - Collector Cutoff (Max)	100µA
Current - Collector (Ic) (Max)	8A

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Part Number	MJE18008G	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN 450V 8A TO220AB	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	87215 pcs stock	Data sheet	MJE18008G.pdf
Voltage - Collector Emitter Breakdown (Max)	450V	Vce Saturation (Max) @ Ib, Ic	700mV @ 900mA, 4.5V
Transistor Type	NPN	Supplier Device Package	TO-220AB
Series	SWITCHMODE™	Power - Max	125W
Packaging	Tube	Package / Case	TO-220-3
Other Names	MJE18008GOS	Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	14 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	13MHz	Detailed Description	Bipolar (BJT) Transistor NPN 450V 8A 13MHz 125W Through Hole TO-220AB
DC Current Gain (hFE) (Min) @ Ic, Vce	14 @ 1A, 5V	Current - Collector Cutoff (Max)	100µA
Current - Collector (Ic) (Max)	8A