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MJE243G

MJE243G

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AMI Semiconductor / ON Semiconductor

Part Number:: MJE243G

Manufacturer/Brand:: AMI Semiconductor / ON Semiconductor

Product Description:: TRANS NPN 100V 4A TO225AA

Datasheets:: MJE243G.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 247508 pcs stock

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Shipment Way:: DHL/Fedex/TNT/UPS/EMS

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MJE243G

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Specifications of MJE243G

AMI Semiconductor / ON Semiconductor

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Part Number	MJE243G	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN 100V 4A TO225AA	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	247508 pcs stock	Data sheet	MJE243G.pdf
Voltage - Collector Emitter Breakdown (Max)	100V	Vce Saturation (Max) @ Ib, Ic	600mV @ 100mA, 1A
Transistor Type	NPN	Supplier Device Package	TO-225AA
Series	-	Power - Max	1.5W
Packaging	Bulk	Package / Case	TO-225AA, TO-126-3
Other Names	MJE243GOS	Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	10 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	40MHz	Detailed Description	Bipolar (BJT) Transistor NPN 100V 4A 40MHz 1.5W Through Hole TO-225AA
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 200mA, 1V	Current - Collector Cutoff (Max)	100nA (ICBO)
Current - Collector (Ic) (Max)	4A

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Part Number	MJE243G	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN 100V 4A TO225AA	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	247508 pcs stock	Data sheet	MJE243G.pdf
Voltage - Collector Emitter Breakdown (Max)	100V	Vce Saturation (Max) @ Ib, Ic	600mV @ 100mA, 1A
Transistor Type	NPN	Supplier Device Package	TO-225AA
Series	-	Power - Max	1.5W
Packaging	Bulk	Package / Case	TO-225AA, TO-126-3
Other Names	MJE243GOS	Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	10 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	40MHz	Detailed Description	Bipolar (BJT) Transistor NPN 100V 4A 40MHz 1.5W Through Hole TO-225AA
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 200mA, 1V	Current - Collector Cutoff (Max)	100nA (ICBO)
Current - Collector (Ic) (Max)	4A