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MJE271G

MJE271G

MJE271G
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See specifications for product details.
AMI Semiconductor / ON SemiconductorAMI Semiconductor / ON Semiconductor
Part Number:
MJE271G
Manufacturer/Brand:
AMI Semiconductor / ON Semiconductor
Product Description:
TRANS PNP DARL 100V 2A TO-225
Datasheets:
MJE271G.pdf
RoHs Status:
Lead free / RoHS Compliant
Stock Condition:
5254 pcs stock
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Shipment Way:
DHL/Fedex/TNT/UPS/EMS

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Specifications of MJE271G

AMI Semiconductor / ON SemiconductorAMI Semiconductor / ON Semiconductor
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Part Number MJE271G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PNP DARL 100V 2A TO-225 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5254 pcs stock Data sheet MJE271G.pdf
Voltage - Collector Emitter Breakdown (Max) 100V Vce Saturation (Max) @ Ib, Ic 3V @ 1.2mA, 120mA
Transistor Type PNP - Darlington Supplier Device Package TO-225AA
Series - Power - Max 1.5W
Packaging Bulk Package / Case TO-225AA, TO-126-3
Other Names MJE271G-ND
MJE271GOS
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 6MHz
Detailed Description Bipolar (BJT) Transistor PNP - Darlington 100V 2A 6MHz 1.5W Through Hole TO-225AA DC Current Gain (hFE) (Min) @ Ic, Vce 1500 @ 120mA, 10V
Current - Collector Cutoff (Max) 1mA Current - Collector (Ic) (Max) 2A
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