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MJE4343G

MJE4343G

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AMI Semiconductor / ON Semiconductor

Part Number:: MJE4343G

Manufacturer/Brand:: AMI Semiconductor / ON Semiconductor

Product Description:: TRANS NPN 160V 16A TO247

Datasheets:: MJE4343G.pdf

RoHs Status:: Lead free / RoHS Compliant

Stock Condition:: 56500 pcs stock

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In Stock 56500 pcs Reference Price(In US Dollars)

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MJE4343G

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Specifications of MJE4343G

AMI Semiconductor / ON Semiconductor

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Part Number	MJE4343G	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN 160V 16A TO247	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	56500 pcs stock	Data sheet	MJE4343G.pdf
Voltage - Collector Emitter Breakdown (Max)	160V	Vce Saturation (Max) @ Ib, Ic	3.5V @ 2A, 16A
Transistor Type	NPN	Supplier Device Package	TO-247
Series	-	Power - Max	125W
Packaging	Tube	Package / Case	TO-247-3
Other Names	MJE4343GOS	Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	2 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	1MHz	Detailed Description	Bipolar (BJT) Transistor NPN 160V 16A 1MHz 125W Through Hole TO-247
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 8A, 2V	Current - Collector Cutoff (Max)	750µA
Current - Collector (Ic) (Max)	16A

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Part Number	MJE4343G	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS NPN 160V 16A TO247	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	56500 pcs stock	Data sheet	MJE4343G.pdf
Voltage - Collector Emitter Breakdown (Max)	160V	Vce Saturation (Max) @ Ib, Ic	3.5V @ 2A, 16A
Transistor Type	NPN	Supplier Device Package	TO-247
Series	-	Power - Max	125W
Packaging	Tube	Package / Case	TO-247-3
Other Names	MJE4343GOS	Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Through Hole	Moisture Sensitivity Level (MSL)	1 (Unlimited)
Manufacturer Standard Lead Time	2 Weeks	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Frequency - Transition	1MHz	Detailed Description	Bipolar (BJT) Transistor NPN 160V 16A 1MHz 125W Through Hole TO-247
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 8A, 2V	Current - Collector Cutoff (Max)	750µA
Current - Collector (Ic) (Max)	16A